Electrical conductivity in metal/3,4,9,10-perylenetetracarboxylic dianhydride/metal structures

Samples comprising 1-μm-thick layers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) sandwiched between top-most In contact and bottom-most Ag contact were synthesized on n-Si(100) substrates. Current–voltage (I–V) characteristics were measured on the structures with all the layers evaporate...

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Bibliographic Details
Published in:Journal of applied physics 2003-05, Vol.93 (10), p.6090-6094
Main Authors: Hudej, Robert, Bratina, Gvido
Format: Article
Language:English
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Summary:Samples comprising 1-μm-thick layers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) sandwiched between top-most In contact and bottom-most Ag contact were synthesized on n-Si(100) substrates. Current–voltage (I–V) characteristics were measured on the structures with all the layers evaporated in sequence, and on the structures with air exposed PTCDA/In and Ag/PTCDA interfaces. The current transport in the structures fabricated without interruption of vacuum is controlled by the space charge and by the traps. Air exposure of the In/PTCDA interface introduces additional trap sites in the PTCDA layer, yielding the space-charge-limited current in the presence of traps, exponentially distributed in energy, and with a hopping transport mobility. Air exposure of the Ag/PTCDA interface introduces a discrete level of traps in addition to exponentially distributed traps.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1568525