The use of Simmons’ equation to quantify the insulating barrier parameters in Al/AlOx/Al tunnel junctions

We have analyzed the electron transport processes in Al/AlOx/Al junctions. The samples were produced by glow-discharge-assisted oxidation of the bottom electrode. The nonlinear I–V curves of 17 samples were measured at room temperature, being very well fitted using the Simmons’ equation with the ins...

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Bibliographic Details
Published in:Applied physics letters 2003-04, Vol.82 (17), p.2832-2834
Main Authors: Dorneles, L. S., Schaefer, D. M., Carara, M., Schelp, L. F.
Format: Article
Language:English
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Summary:We have analyzed the electron transport processes in Al/AlOx/Al junctions. The samples were produced by glow-discharge-assisted oxidation of the bottom electrode. The nonlinear I–V curves of 17 samples were measured at room temperature, being very well fitted using the Simmons’ equation with the insulating barrier thickness, barrier height, and the junction area as free parameters. An exponential growth of the area normalized electrical resistance with thickness is obtained, using just values from I–V curve simulations. The effective tunneling area corresponding to the “hot spots” can be quantified and is five orders of magnitude smaller than the physical area in the studied samples.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1569986