Mapping electron flow using magnetic force microscopy

Electron flow around defects in conductors is highly dependent on the local geometry of the defect. The sensitivity of magnetic force microscopy (MFM) for the direct imaging of such variations at the submicron scale has been tested using model defect structures fabricated in gold lines by focused io...

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Bibliographic Details
Published in:Applied physics letters 2003-05, Vol.82 (19), p.3287-3289
Main Authors: Yongsunthon, R., Stanishevsky, A., Williams, E. D., Rous, P. J.
Format: Article
Language:English
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Summary:Electron flow around defects in conductors is highly dependent on the local geometry of the defect. The sensitivity of magnetic force microscopy (MFM) for the direct imaging of such variations at the submicron scale has been tested using model defect structures fabricated in gold lines by focused ion beam milling. The corresponding MFM images, taken with current densities of ∼106 A/cm2, have qualitatively different features near different defects, with stronger and more localized signal for the more highly curved current pathways. Quantitative analysis, via image deconvolution followed by inversion using the Biot–Savart law, yields parallel and perpendicular components of the current densities in the vicinity of each defect structure. MFM imagery clearly resolves differences in the electron flow around defects of similar size but differing geometry.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1573349