Improved photoluminescence of pulsed-laser-ablated Y2O3:Eu3+ thin-film phosphors by Gd substitution

Gd-substituted Y2−xGdxO3:Eu3+ luminescent thin films have been grown on Al2O3 (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and...

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Bibliographic Details
Published in:Applied physics letters 2003-05, Vol.82 (21), p.3629-3631
Main Authors: Bae, Jong Seong, Jeong, Jung Hyun, Yi, Soung-soo, Park, Jung-Chul
Format: Article
Language:English
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Summary:Gd-substituted Y2−xGdxO3:Eu3+ luminescent thin films have been grown on Al2O3 (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The PL brightness data obtained from Y2−xGdxO3:Eu3+ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than on the crystallinity of the films. In particular, the incorporation of Gd into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y1.35Gd0.60Eu0.05O3, thin film whose brightness was increased by a factor of 3.1 in comparison with that of Y2O3:Eu3+ films. This phosphor has promise for application to the flat panel displays.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1573360