Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser

We report the shortest-wavelength (λ∼8.5 μm) room-temperature laser operation so far achieved for GaAs-based quantum-cascade (QC) lasers. By depositing InAs monolayers in the device active regions during growth, we are able to both reduce the emission wavelength and minimize thermally activated carr...

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Published in:Applied physics letters 2003-05, Vol.82 (20), p.3409-3411
Main Authors: Carder, D. A., Wilson, L. R., Green, R. P., Cockburn, J. W., Hopkinson, M., Steer, M. J., Airey, R., Hill, G.
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creator Carder, D. A.
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description We report the shortest-wavelength (λ∼8.5 μm) room-temperature laser operation so far achieved for GaAs-based quantum-cascade (QC) lasers. By depositing InAs monolayers in the device active regions during growth, we are able to both reduce the emission wavelength and minimize thermally activated carrier leakage into quasicontinuum states. This approach results in laser operation up to 305 K, with a peak optical power of ∼10 mW at room temperature. A reduced temperature sensitivity of the threshold current compared with similar GaAs–Al0.45Ga0.55As QC lasers is also observed.
doi_str_mv 10.1063/1.1576908
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title Room-temperature operation of an InAs–GaAs–AlAs quantum-cascade laser
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