Optical properties of the isoelectronic trap Hg in ZnO

Nominally undoped ZnO crystals were doped with Hg by implanting radioactive Hg197/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is observed at 3.276 51 eV,...

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Published in:Applied physics letters 2003-05, Vol.82 (20), p.3448-3450
Main Authors: Agne, Th, Dietrich, M., Hamann, J., Lany, S., Wolf, H., Wichert, Th
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description Nominally undoped ZnO crystals were doped with Hg by implanting radioactive Hg197/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is observed at 3.276 51 eV, is assigned to a bound exciton. At lower energies, a phonon sideband is visible, which is caused by the strong coupling with acoustical and optical phonons. It is shown that these PL signals are caused by an exciton bound to a Hg atom that resides on a cation site.
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title Optical properties of the isoelectronic trap Hg in ZnO
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