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Photoinduced phase transition of metallic SmS thin films by a femtosecond laser

Metallic SmS thin films with 100–2000 nm in thickness were prepared by rf magnetron sputtering. The metallic- to semiconductor-phase transition was induced by a regeneratively amplified mode-locked Ti:sapphire laser. The shifts of the (200) peak due to the phase transition were observed by grazing i...

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Bibliographic Details
Published in:Applied physics letters 2003-05, Vol.82 (21), p.3641-3643
Main Authors: Kitagawa, R., Takebe, H., Morinaga, K.
Format: Article
Language:English
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Summary:Metallic SmS thin films with 100–2000 nm in thickness were prepared by rf magnetron sputtering. The metallic- to semiconductor-phase transition was induced by a regeneratively amplified mode-locked Ti:sapphire laser. The shifts of the (200) peak due to the phase transition were observed by grazing incidence x-ray diffraction (GIXD) analysis. This phase transition was accompanied by the significant reflectance change of the thin films up to 45% in the near-infrared region. The depth of the phase transition layer from the surface of the film irradiated by a femtosecond laser pulse was estimated ∼200 nm from the depth profile of GIXD.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1577824