Real-time in situ x-ray diffraction as a method to control epitaxial growth

We developed a real-time in situ x-ray Bragg diffraction technique for monitoring epitaxial growth. In our setup, the x-ray diffraction requirement of an extremely exact sample adjustment and an angular scan of sample and detector are circumvented by using a slightly divergent x-ray beam and observi...

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Bibliographic Details
Published in:Applied physics letters 2003-06, Vol.82 (26), p.4684-4686
Main Authors: Bader, A. S., Faschinger, W., Schumacher, C., Geurts, J., Molenkamp, L. W., Neder, R. B., Karczewski, G.
Format: Article
Language:English
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Summary:We developed a real-time in situ x-ray Bragg diffraction technique for monitoring epitaxial growth. In our setup, the x-ray diffraction requirement of an extremely exact sample adjustment and an angular scan of sample and detector are circumvented by using a slightly divergent x-ray beam and observing an extremely asymmetric Bragg reflection with a multichannel detector. The angular range covered by the stationary multichannel detector corresponds nearly exactly to the qz interval of a conventional ω−2θ scan. The technique is demonstrated by monitoring the molecular-beam epitaxial growth of a ZnSe epilayer on (001)GaAs. The exposure time of each diffraction pattern is only a few seconds, which enables a real-time x-ray diffraction monitoring of the epitaxial growth process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1582360