Quantum cascade lasers grown by metalorganic vapor phase epitaxy

We report the growth of GaAs-based quantum cascade lasers using atmospheric pressure metalorganic vapor phase epitaxy. The necessary control of interface abruptness and layer thickness uniformity throughout the structure has been achieved using a horizontal reactor in combination with individually p...

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Bibliographic Details
Published in:Applied physics letters 2003-06, Vol.82 (24), p.4221-4223
Main Authors: Roberts, J. S., Green, R. P., Wilson, L. R., Zibik, E. A., Revin, D. G., Cockburn, J. W., Airey, R. J.
Format: Article
Language:English
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Summary:We report the growth of GaAs-based quantum cascade lasers using atmospheric pressure metalorganic vapor phase epitaxy. The necessary control of interface abruptness and layer thickness uniformity throughout the structure has been achieved using a horizontal reactor in combination with individually purged vent/run valves. A low-temperature threshold current density of 10 kA/cm2 and maximum operating temperature of 140 K have been measured. These performance levels are comparable with early GaAs-based devices grown using molecular-beam epitaxy. The measured emission wavelength (λ∼11.8 μm) is approximately 3-μm longer than the calculated transition wavelength, which we explain using a model incorporating compositional grading of the active region barriers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1583858