Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer

Silicon-on-insulator (SOI) and bulk metal–oxide–semiconductor (MOS) transistors were fabricated simultaneously and tested electrically and optically at room temperature. The electroluminescence (EL) spectrum has been measured in both types of devices. A visible emitted radiation was observed when bo...

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Bibliographic Details
Published in:Applied physics letters 2003-06, Vol.82 (26), p.4830-4832
Main Authors: Karsenty, Avi, Sa’ar, Amir, Ben-Yosef, Nissim, Shappir, Joseph
Format: Article
Language:English
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Summary:Silicon-on-insulator (SOI) and bulk metal–oxide–semiconductor (MOS) transistors were fabricated simultaneously and tested electrically and optically at room temperature. The electroluminescence (EL) spectrum has been measured in both types of devices. A visible emitted radiation was observed when both devices were operated in the avalanche breakdown mode. In the case of SOI device, five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed. The regular spacing between the measured peaks indicates cavity effects due to the various layers of the SOI MOS transistor structure. The thin silicon layer thickness of 400 Å seems to be responsible for the factor of about 16 in the EL intensity of the SOI device as compared to the bulk device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1587877