Combining high resolution and tensorial analysis in Raman stress measurements of silicon

We present the development of a Raman spectroscopy technique for the measurement of the tensorial nature of stress in silicon on a micrometric scale. After the detailed description of the theoretical bases of the experiment, we measure the stress tensor of a silicon surface close to a scratch. Then,...

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Bibliographic Details
Published in:Journal of applied physics 2003-08, Vol.94 (4), p.2729-2740
Main Authors: Bonera, Emiliano, Fanciulli, Marco, Batchelder, David N.
Format: Article
Language:English
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Summary:We present the development of a Raman spectroscopy technique for the measurement of the tensorial nature of stress in silicon on a micrometric scale. After the detailed description of the theoretical bases of the experiment, we measure the stress tensor of a silicon surface close to a scratch. Then, we apply this method to discern which models are suitable for the description of the stress tensor in shallow trench isolations for microelectronics.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1592872