650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those grown...

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Bibliographic Details
Published in:Applied physics letters 2003-07, Vol.83 (4), p.596-598
Main Authors: Dong, Jian-Rong, Teng, Jing-Hua, Chua, Soo-Jin, Foo, Boon-Chin, Wang, Yan-Jun, Yuan, Hai-Rong, Yuan, Shu
Format: Article
Language:English
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Summary:Using tertiarybutylphosphine (TBP) as phosphorus precursor, high-quality AlGaInP epilayers and AlGaInP/GaInP multiple-quantum-well (MQW) structures have been grown by metalorganic chemical vapor deposition. The photoluminescence results indicate that the AlGaInP materials are as good as those grown using PH3 in terms of optical quality. Finally, AlGaInP MQW red laser structures have been grown, and the electrically pumped AlGaInP red lasers grown by TBP have been demonstrated with the emission wavelength of 647 nm, indicating that TBP can be used to grow high-quality AlGaInP epilayers and AlGaInP-based red lasers, which presently is dominated by the highly toxic gas source PH3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1593782