Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spec...

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Bibliographic Details
Published in:Applied physics letters 2003-08, Vol.83 (5), p.931-933
Main Authors: Jiang, Fan, Stavola, Michael, Rohatgi, A., Kim, D., Holt, J., Atwater, H., Kalejs, J.
Format: Article
Language:English
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Summary:A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1598643