Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study

• Published in: Journal of applied physics 2003-09, Vol.94 (5), p.3427-3435
• Main Authors: Grill, A., Patel, V., Rodbell, K. P., Huang, E., Baklanov, M. R., Mogilnikov, K. P., Toney, M., Kim, H.-C.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1599957

The low dielectric constant (k) of plasma enhanced chemical vapor deposited SiCOH films has been attributed to porosity in the films. We have shown previously that the dielectric constant of such materials can be extended from the typical k values of 2.7–2.9 to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by enhancing the porosity in the films through the addition of an organic material to the SiCOH precursor and annealing the films to remove the thermally less-stable organic fractions. In order to confirm the relation between dielectric constant and film porosity the latter has been evaluated for SiCOH films with k values from 2.8 to 2.05 using positron annihilation spectroscopy, positron annihilation lifetime spectroscopy, small angle x-ray scattering, specular x-ray reflectivity, and ellipsometric porosimetry measurements. It has been found that the SiCOH films with k=2.8 had no detectable porosity, however the porosity increased with decreasing dielectric constant reaching values of 28%–39% for k values of 2.05. The degree of porosity and the pore size determined by the dissimilar techniques agreed within reasonable limits, especially when one takes into account the small pore size in these films and the different assumptions used by the different techniques. The pore size increases with decreasing k, however the diameter remains below 5 nm for k=2.05, most of the pores being smaller than 2.5 nm.