Effects of dry etching processes on effective refractive index of ZnTe surface layers in terahertz region

We report on the far-infrared (FIR) reflection spectra of high-quality ZnTe crystals exposed to CH4/H2 gases under different rf plasma powers. The effects of reactive ion etching on the effective refractive index of perturbed ZnTe surface layers have been investigated in the terahertz (THz) frequenc...

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Bibliographic Details
Published in:Journal of applied physics 2003-09, Vol.94 (6), p.3800-3804
Main Authors: Wu, S., Ren, Z. Q., Shen, W. Z., Ogawa, H., Guo, Q. X.
Format: Article
Language:English
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Summary:We report on the far-infrared (FIR) reflection spectra of high-quality ZnTe crystals exposed to CH4/H2 gases under different rf plasma powers. The effects of reactive ion etching on the effective refractive index of perturbed ZnTe surface layers have been investigated in the terahertz (THz) frequency range of 1.5–10.0 THz. The FIR refractive index has been found to decrease with the increase of plasma power, which has been well described by Sellmeier formulas. Furthermore, the obtained experimental data have been employed for THz electro-optic applications by predicting the effects of RIE on the second-order nonlinear susceptibility and the THz pulse intensity after dispersive propagation/absorption in the ZnTe surface layers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1602568