Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode,...

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Bibliographic Details
Published in:Applied physics reviews 2003-09, Vol.94 (6), p.3990-3994
Main Authors: Andresen, S. E., So/rensen, B. S., Rasmussen, F. B., Lindelof, P. E., Sadowski, J., Guertler, C. M., Bland, J. A. C.
Format: Article
Language:English
Subjects:
Fysik
Natural Sciences
Naturvetenskap
Physical Sciences
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Summary:We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
ISSN:0021-8979
1931-9401
1089-7550
1931-9401
DOI:10.1063/1.1602945