Indication of hysteresis in AlMnN

AlN films grown by gas-source molecular beam epitaxy were doped with different levels of Mn during growth. High resolution x-ray diffraction characterization revealed good crystallinity in single phase material, with lattice constant decreasing with increasing Mn concentration. Single phase AlMnN wa...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2003-09, Vol.83 (9), p.1758-1760
Main Authors: Frazier, R., Thaler, G., Overberg, M., Gila, B., Abernathy, C. R., Pearton, S. J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AlN films grown by gas-source molecular beam epitaxy were doped with different levels of Mn during growth. High resolution x-ray diffraction characterization revealed good crystallinity in single phase material, with lattice constant decreasing with increasing Mn concentration. Single phase AlMnN was found to be p type while AlMnN/AlMn mixed phase material was found to be highly conductive n type. Magnetization measurements performed with a superconducting quantum interference device magnetometer indicated ferromagnetism in single phase material persisting to 300 K and showed no evidence of room temperature magnetization in multiphase material. In particular, it was shown that Mn4N second phases are not contributing to the magnetization in the AlMnN under optimized growth conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1604465