Dose dependence of carrier and heat dynamics at an ion-implanted silicon surface measured using lens-free heterodyne transient grating method

The lens-free heterodyne transient grating method was shown to reveal the dynamics of photoexcited carriers and heat on the surface region of an ion-implanted silicon in the dose range of 1011–1015 cm−2. In addition to the fact that the detection limit of the dose was superior to that for convention...

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Published in:Journal of applied physics 2003-10, Vol.94 (8), p.4904-4907
Main Authors: Katayama, Kenji, Yamaguchi, Masahiro, Sawada, Tsuguo
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Language:English
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description The lens-free heterodyne transient grating method was shown to reveal the dynamics of photoexcited carriers and heat on the surface region of an ion-implanted silicon in the dose range of 1011–1015 cm−2. In addition to the fact that the detection limit of the dose was superior to that for conventional methods, several physical properties of the carrier and heat can be obtained by analyzing transient responses. Theoretical analysis provided the lifetime of carriers and thermal diffusion coefficients in the ion-implanted surface region.
doi_str_mv 10.1063/1.1605255
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title Dose dependence of carrier and heat dynamics at an ion-implanted silicon surface measured using lens-free heterodyne transient grating method
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