Magnetoresistance oscillations induced by intersubband scattering of two-dimensional electron gas in Al0.22Ga0.78N/GaN heterostructures

• Published in: Journal of applied physics 2003-10, Vol.94 (8), p.5420-5422
• Main Authors: Tang, N., Shen, B., Zheng, Z. W., Liu, J., Chen, D. J., Lu, J., Zhang, R., Shi, Y., Zheng, Y. D., Gui, Y. S., Jiang, C. P., Qiu, Z. J., Guo, S. L., Chu, J. H., Hoshino, K., Someya, T., Arakawa, Y.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1606507

Magnetointersubband scattering (MIS) oscillations of two-dimensional electron gas (2DEG) in Al0.22Ga0.78N/GaN heterostructures have been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Double periodic Shubnikov–de Haas oscillations modulated by MIS oscillations have been observed due to the intersubband scattering of the 2DEG at the two lowest subbands in the triangular quantum well at the heterointerface. By using the fast Fourier transform analysis, it is found that the MIS oscillations become slightly weaker with an increase in temperature. From the MIS frequency, the energy separation between the first and the second subbands is determined to be 80 meV. The observation of the MIS effect indicates that the effective masses of the electrons in the first and second subbands are the same in Al0.22Ga0.78N/GaN heterostructures.