Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation

The in situ observation of reflection high-energy electron diffraction (RHEED) oscillations during the metalorganic-molecular-beam epitaxy deposition of AlAs and AlGaAs epitaxial layers is reported. In situ RHEED oscillations as well as atomic force microscopy measurements confirmed the layer-by-lay...

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Bibliographic Details
Published in:Journal of applied physics 2003-10, Vol.94 (8), p.4871-4875
Main Authors: Ganapathy, Sasikala, Kurimoto, Makoto, Thilakan, Periyasamy, Uesugi, Kasturi, Suemune, Ikuo, Machida, Hideaki, Shimoyama, Norio
Format: Article
Language:English
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Summary:The in situ observation of reflection high-energy electron diffraction (RHEED) oscillations during the metalorganic-molecular-beam epitaxy deposition of AlAs and AlGaAs epitaxial layers is reported. In situ RHEED oscillations as well as atomic force microscopy measurements confirmed the layer-by-layer growth of the AlAs as well as the AlGaAs layers on GaAs substrates. RHEED oscillation was successfully applied to the precise control of the AlAs/GaAs superlattices and of the alloy compositions in the AlGaAs alloys. High-resolution x-ray diffraction and Hall effect measurements revealed the unintentional doping of carbon into the AlGaAs layers, but it was found that the increase in the V/III ratio is able to reduce the carbon incorporation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1606515