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Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appear in both sides of the junctions, so that half-metallicity, typical of b...

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Published in:Journal of applied physics 2003-10, Vol.94 (7), p.4723-4725
Main Authors: Picozzi, S., Continenza, A., Freeman, A. J.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23
cites cdi_FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23
container_end_page 4725
container_issue 7
container_start_page 4723
container_title Journal of applied physics
container_volume 94
creator Picozzi, S.
Continenza, A.
Freeman, A. J.
description Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appear in both sides of the junctions, so that half-metallicity, typical of bulk Co2MnGe, is locally lost. As for the potential discontinuity, the character of the contact is dramatically affected by the semiconductor side: In Co2MnGe/GaAs, irrespective of the atomic termination, the Fermi level is pinned within the energy band gap, whereas it lies close to the valence-band maximum in the case of Co2MnGe/Ge. This gives rise to a rectifying contact in the first case and ohmic for holes in the second case, both potentially useful for spin–injection purposes. Finally, we investigate the effects of possible Co–Mn antisites in bulk Co2MnGe and find that half-metallicity is only locally destroyed, since defect-induced gap states are shown to be screened in a couple of nearest-neighbor atomic shells.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1608469</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1608469</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23</originalsourceid><addsrcrecordid>eNotkDFPwzAUhC0EEqUw8A-8Mrj1s5s4ZkMVpUiVGIA5cu1n4SpxItsduvLLCdDpSffuPumOkHvgC-C1XMICat6san1BZsAbzVRV8Usy41wAa7TS1-Qm5wPnAI3UM_L9PoZIQzygLWGI1BS6xWPuMC0z9sEO0R1tGdJkKZi8sZgf6SakXNiYQrRh7DBTh9OzD9H8MQZPx6FgLMF01IU8QUqIx1BO1ERHv0znWY_FdF2wk3hLrrzpMt6d75x8bp4_1lu2e3t5XT_tmBVCFeaNrACs8U43XHGnUJuqFqAa3DuASssVglt5Kab-ci-hwnoKCqVBNsILOScP_1ybhpwT-nZq0Jt0aoG3v-O10J7Hkz-PfGRC</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Picozzi, S. ; Continenza, A. ; Freeman, A. J.</creator><creatorcontrib>Picozzi, S. ; Continenza, A. ; Freeman, A. J.</creatorcontrib><description>Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appear in both sides of the junctions, so that half-metallicity, typical of bulk Co2MnGe, is locally lost. As for the potential discontinuity, the character of the contact is dramatically affected by the semiconductor side: In Co2MnGe/GaAs, irrespective of the atomic termination, the Fermi level is pinned within the energy band gap, whereas it lies close to the valence-band maximum in the case of Co2MnGe/Ge. This gives rise to a rectifying contact in the first case and ohmic for holes in the second case, both potentially useful for spin–injection purposes. Finally, we investigate the effects of possible Co–Mn antisites in bulk Co2MnGe and find that half-metallicity is only locally destroyed, since defect-induced gap states are shown to be screened in a couple of nearest-neighbor atomic shells.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1608469</identifier><language>eng</language><ispartof>Journal of applied physics, 2003-10, Vol.94 (7), p.4723-4725</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23</citedby><cites>FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Picozzi, S.</creatorcontrib><creatorcontrib>Continenza, A.</creatorcontrib><creatorcontrib>Freeman, A. J.</creatorcontrib><title>Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity</title><title>Journal of applied physics</title><description>Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appear in both sides of the junctions, so that half-metallicity, typical of bulk Co2MnGe, is locally lost. As for the potential discontinuity, the character of the contact is dramatically affected by the semiconductor side: In Co2MnGe/GaAs, irrespective of the atomic termination, the Fermi level is pinned within the energy band gap, whereas it lies close to the valence-band maximum in the case of Co2MnGe/Ge. This gives rise to a rectifying contact in the first case and ohmic for holes in the second case, both potentially useful for spin–injection purposes. Finally, we investigate the effects of possible Co–Mn antisites in bulk Co2MnGe and find that half-metallicity is only locally destroyed, since defect-induced gap states are shown to be screened in a couple of nearest-neighbor atomic shells.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAUhC0EEqUw8A-8Mrj1s5s4ZkMVpUiVGIA5cu1n4SpxItsduvLLCdDpSffuPumOkHvgC-C1XMICat6san1BZsAbzVRV8Usy41wAa7TS1-Qm5wPnAI3UM_L9PoZIQzygLWGI1BS6xWPuMC0z9sEO0R1tGdJkKZi8sZgf6SakXNiYQrRh7DBTh9OzD9H8MQZPx6FgLMF01IU8QUqIx1BO1ERHv0znWY_FdF2wk3hLrrzpMt6d75x8bp4_1lu2e3t5XT_tmBVCFeaNrACs8U43XHGnUJuqFqAa3DuASssVglt5Kab-ci-hwnoKCqVBNsILOScP_1ybhpwT-nZq0Jt0aoG3v-O10J7Hkz-PfGRC</recordid><startdate>20031001</startdate><enddate>20031001</enddate><creator>Picozzi, S.</creator><creator>Continenza, A.</creator><creator>Freeman, A. J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20031001</creationdate><title>Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity</title><author>Picozzi, S. ; Continenza, A. ; Freeman, A. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Picozzi, S.</creatorcontrib><creatorcontrib>Continenza, A.</creatorcontrib><creatorcontrib>Freeman, A. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Picozzi, S.</au><au>Continenza, A.</au><au>Freeman, A. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity</atitle><jtitle>Journal of applied physics</jtitle><date>2003-10-01</date><risdate>2003</risdate><volume>94</volume><issue>7</issue><spage>4723</spage><epage>4725</epage><pages>4723-4725</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Technologically relevant properties, such as potential discontinuity and half-metallic behavior, are determined by means of an accurate first-principles approach for Co2MnGe/GaAs and Co2MnGe/Ge interfaces. Interface states appear in both sides of the junctions, so that half-metallicity, typical of bulk Co2MnGe, is locally lost. As for the potential discontinuity, the character of the contact is dramatically affected by the semiconductor side: In Co2MnGe/GaAs, irrespective of the atomic termination, the Fermi level is pinned within the energy band gap, whereas it lies close to the valence-band maximum in the case of Co2MnGe/Ge. This gives rise to a rectifying contact in the first case and ohmic for holes in the second case, both potentially useful for spin–injection purposes. Finally, we investigate the effects of possible Co–Mn antisites in bulk Co2MnGe and find that half-metallicity is only locally destroyed, since defect-induced gap states are shown to be screened in a couple of nearest-neighbor atomic shells.</abstract><doi>10.1063/1.1608469</doi><tpages>3</tpages></addata></record>
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1089-7550
language eng
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title Spin injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T16%3A50%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Spin%20injection%20at%20Heusler/semiconductor%20interfaces:%20First-principles%20determination%20of%20potential%20discontinuity%20and%20half-metallicity&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Picozzi,%20S.&rft.date=2003-10-01&rft.volume=94&rft.issue=7&rft.spage=4723&rft.epage=4725&rft.pages=4723-4725&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1608469&rft_dat=%3Ccrossref%3E10_1063_1_1608469%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c227t-fa3511cafd98070d7e9a562178ebd115934e1d4f320843b315e62272791382f23%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true