Orientation dependent microwave dielectric properties of ferroelectric Ba1−xSrxTiO3 thin films

The effects of anisotropic dielectric properties of ferroelectric Ba1−xSrxTiO3 (BST) films on the characteristics of the interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST films with (001), (011), and (111) orientation were epitaxially grown o...

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Bibliographic Details
Published in:Applied physics letters 2003-09, Vol.83 (11), p.2166-2168
Main Authors: Moon, Seung Eon, Kim, Eun-Kyoung, Kwak, Min-Hwan, Ryu, Han-Cheol, Kim, Young-Tae, Kang, Kwang-Yong, Lee, Su-Jae, Kim, Won-Jeong
Format: Article
Language:English
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Summary:The effects of anisotropic dielectric properties of ferroelectric Ba1−xSrxTiO3 (BST) films on the characteristics of the interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST films with (001), (011), and (111) orientation were epitaxially grown on (001), (011), and (111) MgO substrates, respectively, by the pulsed laser deposition method. The microwave properties of orientation engineered BST films were investigated using interdigital capacitors. The calculated dielectric constant tunability with 40 V dc bias variation and the calculated dielectric quality factor values for IDT capacitors based on (001), (011), and (111) oriented BST films at 9 GHz with no dc bias were about 47%, 55%, 43%, and 12, 14, 21, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1609658