Carrier–carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

We describe carrier–carrier interaction in self-assembled In0.5Ga0.5As quantum dots (QDs) at room temperature. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density are investigated through near-field single quantum dot photoluminescence spectro...

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Bibliographic Details
Published in:Applied physics letters 2003-09, Vol.83 (11), p.2250-2252
Main Authors: Matsuda, K., Ikeda, K., Saiki, T., Saito, H., Nishi, K.
Format: Article
Language:English
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Summary:We describe carrier–carrier interaction in self-assembled In0.5Ga0.5As quantum dots (QDs) at room temperature. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density are investigated through near-field single quantum dot photoluminescence spectroscopy. From the viewpoint of excitation density dependent spectral broadening of the ground state emission, we discuss the dephasing process in QDs due to Coulomb interaction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1609662