Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

The effect of illumination from the laser of an optical-beam-deflection atomic force microscope (AFM) on a semiconductor sample is monitored with a (connected in parallel) scanning capacitance microscope (SCM). The photoexcitation of carriers in a silicon sample is quantified using the SCM measured...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2003-09, Vol.83 (12), p.2486-2488
Main Authors: Buh, G. H., Kopanski, J. J.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of illumination from the laser of an optical-beam-deflection atomic force microscope (AFM) on a semiconductor sample is monitored with a (connected in parallel) scanning capacitance microscope (SCM). The photoexcitation of carriers in a silicon sample is quantified using the SCM measured capacitance–voltage curves. A significant difference is seen between SCM capacitance–voltage characteristics measured under true-dark and normal (illuminated) conditions, and is attributed to light spillage over the edges of the AFM cantilever and light transmission through the cantilever. We developed a light-induced transient spectroscopy through simple modification of a commercial SCM and demonstrate it as a tool for the measurement of carrier lifetime with microscopic scale.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1613800