Photoresist-free printing of amorphous silicon thin-film transistors

Conventional fabrication of amorphous silicon thin-film transistors (a-Si TFTs) requires patterning numerous photoresist layers, a subtractive process that is time consuming and expensive. This letter describes transistor fabrication by a photoresist-free approach in which polymer etch masks are let...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2003-10, Vol.83 (15), p.3207-3209
Main Authors: Miller, Scott M., Troian, Sandra M., Wagner, Sigurd
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Conventional fabrication of amorphous silicon thin-film transistors (a-Si TFTs) requires patterning numerous photoresist layers, a subtractive process that is time consuming and expensive. This letter describes transistor fabrication by a photoresist-free approach in which polymer etch masks are letterpress printed from flexible polyimide stamps. Pattern registration is achieved through optical alignment since the printed masks are thin and optically transparent. This modified fabrication scheme produces transistor performance equivalent to conventionally fabricated a-Si TFTs. The ability to directly print etch masks onto nonhomogeneous substrates brings one step closer the realization of flexible, large-area, macroelectronic fabrication.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1618364