Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn1−xCdxO allows reduction of the band gap relative to ZnO, which would be necessary for devices emitting visible light. We have analyzed the structural and optical properties of Zn1−xCdxO layers grown by metal...

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Bibliographic Details
Published in:Applied physics letters 2003-10, Vol.83 (16), p.3290-3292
Main Authors: Gruber, Th, Kirchner, C., Kling, R., Reuss, F., Waag, A., Bertram, F., Forster, D., Christen, J., Schreck, M.
Format: Article
Language:English
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Summary:The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn1−xCdxO allows reduction of the band gap relative to ZnO, which would be necessary for devices emitting visible light. We have analyzed the structural and optical properties of Zn1−xCdxO layers grown by metalorganic vapor-phase epitaxy. A narrowing of the fundamental band gap of up to 300 meV has been observed, while introducing a lattice mismatch of only 0.5% with respect to binary ZnO. Photoluminescence, high-resolution x-ray diffraction, and spatially resolved cathodoluminescence measurements revealed a lateral distribution of two different cadmium concentrations within the Zn1−xCdxO layers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1620674