Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Self-diffusion of ion-implanted Si30 in SiO2 formed directly on Si substrates by thermal oxidation was studied as a function of the temperature and SiO2 thickness (200, 300, and 650 nm). The diffusion coefficient increases by about an order of magnitude with decreasing SiO2 thickness from 650 to 200...

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Bibliographic Details
Published in:Applied physics letters 2003-11, Vol.83 (19), p.3897-3899
Main Authors: Fukatsu, Shigeto, Takahashi, Tomonori, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji, Gösele, Ulrich
Format: Article
Language:English
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Summary:Self-diffusion of ion-implanted Si30 in SiO2 formed directly on Si substrates by thermal oxidation was studied as a function of the temperature and SiO2 thickness (200, 300, and 650 nm). The diffusion coefficient increases by about an order of magnitude with decreasing SiO2 thickness from 650 to 200 nm when silicon–nitride capping layers are placed on top of the SiO2, i.e., the distance between the Si30 diffusers and Si/SiO2 interface has a strong influence. Because the stress on SiO2 by nitride estimated for such a change in diffusivity is unrealistically large, Si species, most likely SiO, generated at the Si/SiO2 interface and diffusing into SiO2 must be affecting the self-diffusion of Si in SiO2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1625775