Generation–recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

The generation–recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is assoc...

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Bibliographic Details
Published in:Journal of applied physics 2003-12, Vol.94 (12), p.7590-7593
Main Authors: Kunets, Vas. P., Müller, U., Dobbert, J., Pomraenke, R., Tarasov, G. G., Masselink, W. T., Kostial, H., Kissel, H., Mazur, Yu. I.
Format: Article
Language:English
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Summary:The generation–recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al0.30Ga0.70As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ0≃1×10−11 cm2, and a total integrated defect concentration of about Nts≃1.4×1010 cm−2.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1625783