Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene

We report the fabrication of field-effect transistors on single crystals of the highly anisotropic organic semiconductor tetramethyltetraselenafulvalene. We find maximum mobilities of 0.2 cm2/V s at room temperature. We observe an exponential decrease of mobility with decreasing temperature with an...

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Bibliographic Details
Published in:Applied physics letters 2003-12, Vol.83 (23), p.4782-4784
Main Authors: Nam, M.-S., Ardavan, A., Cava, R. J., Chaikin, P. M.
Format: Article
Language:English
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Summary:We report the fabrication of field-effect transistors on single crystals of the highly anisotropic organic semiconductor tetramethyltetraselenafulvalene. We find maximum mobilities of 0.2 cm2/V s at room temperature. We observe an exponential decrease of mobility with decreasing temperature with an activation energy 160±30 meV, independent of sample quality or fabrication method.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1631751