Modulation of light by light in silicon-on-insulator waveguides

We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of...

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Bibliographic Details
Published in:Applied physics letters 2003-12, Vol.83 (25), p.5151-5153
Main Authors: Stepanov, S., Ruschin, S.
Format: Article
Language:English
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Summary:We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1636518