Loading…

Modulation of light by light in silicon-on-insulator waveguides

We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2003-12, Vol.83 (25), p.5151-5153
Main Authors: Stepanov, S., Ruschin, S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903
cites cdi_FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903
container_end_page 5153
container_issue 25
container_start_page 5151
container_title Applied physics letters
container_volume 83
creator Stepanov, S.
Ruschin, S.
description We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well.
doi_str_mv 10.1063/1.1636518
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1636518</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1636518</sourcerecordid><originalsourceid>FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903</originalsourceid><addsrcrecordid>eNotj09LAzEUxIMouFYPfoO9ekh9Ly__9iRStAoVL3pe0mxSI-tGNlul394WCwMzA8PAj7FrhDmCplucoyat0J6wCsEYToj2lFUAQFw3Cs_ZRSmf-6oEUcXuXnK37d2U8lDnWPdp8zHV690xpKEuqU8-D3yvNJTDNI_1r_sJm23qQrlkZ9H1JVwdfcbeHx_eFk989bp8XtyvuBfCTJyktkq4xgq0sgH0XhrVGE8SAhkZfJBBeIgK1yJSJGuDkggOuhi0a4Bm7Ob_14-5lDHE9ntMX27ctQjtgbzF9khOf29bSgI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Modulation of light by light in silicon-on-insulator waveguides</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics(アメリカ物理学協会)</source><creator>Stepanov, S. ; Ruschin, S.</creator><creatorcontrib>Stepanov, S. ; Ruschin, S.</creatorcontrib><description>We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1636518</identifier><language>eng</language><ispartof>Applied physics letters, 2003-12, Vol.83 (25), p.5151-5153</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903</citedby><cites>FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Stepanov, S.</creatorcontrib><creatorcontrib>Ruschin, S.</creatorcontrib><title>Modulation of light by light in silicon-on-insulator waveguides</title><title>Applied physics letters</title><description>We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotj09LAzEUxIMouFYPfoO9ekh9Ly__9iRStAoVL3pe0mxSI-tGNlul394WCwMzA8PAj7FrhDmCplucoyat0J6wCsEYToj2lFUAQFw3Cs_ZRSmf-6oEUcXuXnK37d2U8lDnWPdp8zHV690xpKEuqU8-D3yvNJTDNI_1r_sJm23qQrlkZ9H1JVwdfcbeHx_eFk989bp8XtyvuBfCTJyktkq4xgq0sgH0XhrVGE8SAhkZfJBBeIgK1yJSJGuDkggOuhi0a4Bm7Ob_14-5lDHE9ntMX27ctQjtgbzF9khOf29bSgI</recordid><startdate>20031222</startdate><enddate>20031222</enddate><creator>Stepanov, S.</creator><creator>Ruschin, S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20031222</creationdate><title>Modulation of light by light in silicon-on-insulator waveguides</title><author>Stepanov, S. ; Ruschin, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stepanov, S.</creatorcontrib><creatorcontrib>Ruschin, S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stepanov, S.</au><au>Ruschin, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modulation of light by light in silicon-on-insulator waveguides</atitle><jtitle>Applied physics letters</jtitle><date>2003-12-22</date><risdate>2003</risdate><volume>83</volume><issue>25</issue><spage>5151</spage><epage>5153</epage><pages>5151-5153</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well.</abstract><doi>10.1063/1.1636518</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2003-12, Vol.83 (25), p.5151-5153
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_1636518
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics(アメリカ物理学協会)
title Modulation of light by light in silicon-on-insulator waveguides
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T05%3A50%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modulation%20of%20light%20by%20light%20in%20silicon-on-insulator%20waveguides&rft.jtitle=Applied%20physics%20letters&rft.au=Stepanov,%20S.&rft.date=2003-12-22&rft.volume=83&rft.issue=25&rft.spage=5151&rft.epage=5153&rft.pages=5151-5153&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1636518&rft_dat=%3Ccrossref%3E10_1063_1_1636518%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c227t-346852a982184901cc47597c340e374ece4e2c0f51b2f3f388e5410a0dfe6a903%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true