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Modulation of light by light in silicon-on-insulator waveguides
We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of...
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Published in: | Applied physics letters 2003-12, Vol.83 (25), p.5151-5153 |
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Language: | English |
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container_end_page | 5153 |
container_issue | 25 |
container_start_page | 5151 |
container_title | Applied physics letters |
container_volume | 83 |
creator | Stepanov, S. Ruschin, S. |
description | We report infrared light modulation based on direct free-carrier absorption induced by visible light irradiation in silicon-on-insulator waveguides. An amplitude modulation depth of 96% and 89% was measured for waveguide light carrier at a wavelength of 1.55 and 1.32 μm. The frequency dependence of the modulation effect was measured as well. |
doi_str_mv | 10.1063/1.1636518 |
format | article |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics(アメリカ物理学協会) |
title | Modulation of light by light in silicon-on-insulator waveguides |
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