Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films

The previously reported positive temperature coefficient of the resistivity (PTCR) observed in paraelectric BST thin films was again analyzed in terms of the non-Ohmic resistance as a result of an anode interface energy barrier induced by the high local charge density and interface energy states. Th...

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Bibliographic Details
Published in:Applied physics letters 2004-01, Vol.84 (1), p.94-96
Main Authors: Jeong, Doo Seok, Ahn, Kun Ho, Park, Woo Young, Hwang, Cheol Seong
Format: Article
Language:English
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Summary:The previously reported positive temperature coefficient of the resistivity (PTCR) observed in paraelectric BST thin films was again analyzed in terms of the non-Ohmic resistance as a result of an anode interface energy barrier induced by the high local charge density and interface energy states. The decrease in the low frequency dielectric constant, which is the dielectric constant relevant to the PTCR effect, with increasing temperature has a larger effect on the anode energy barrier than the temperature increase itself under a high bias voltage. In this case, the slope in the current-voltage curve at higher temperature decreases, which appears as the PTCR effect when the resistance is measured as a function of temperature under high voltages.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1637946