Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05–3400 ...

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Bibliographic Details
Published in:Applied physics letters 2004-01, Vol.84 (1), p.7-9
Main Authors: Karachinsky, L. Ya, Pellegrini, S., Buller, G. S., Shkolnik, A. S., Gordeev, N. Yu, Evtikhiev, V. P., Novikov, V. B.
Format: Article
Language:English
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Summary:Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05–3400 W cm−2 at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1637962