Enhancement and anisotropy of the Landau g factor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed in Shubnikov–de Haas oscillations at a magnetic fie...

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Bibliographic Details
Published in:Journal of applied physics 2004-03, Vol.95 (5), p.2473-2476
Main Authors: Zheng, Z. W., Shen, B., Gui, Y. S., Qiu, Z. J., Jiang, C. P., Tang, N., Liu, J., Chen, D. J., Zhou, H. M., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Chu, J. H., Hoshino, K., Arakawa, Y.
Format: Article
Language:English
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Summary:Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed in Shubnikov–de Haas oscillations at a magnetic field higher than 5.4 T and a temperature of 1.4 K. The effective g factor g* is enhanced due to the exchange interaction of the 2DEG at high densities. The ratio of the transverse effective g factor g⊥* and the longitudinal effective g factor g∥* is g⊥*/g∥*=2.6 indicating the large difference between g∥* and g⊥*. It is demonstrated that the anisotropy of the g* is due to the strong polarization-induced electric field at the heterointerface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1642732