V defects of ZnO thin films grown on Si as an ultraviolet optical path

V defects were observed in the ZnO films epitaxially grown on the ZnS-buffered Si. Although the defects were located on the surface, strong near-bandedge emission confined to the {101̄1} facets of V defects was observed at room temperature. The near-bandedge emission spreads out over the whole film...

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Bibliographic Details
Published in:Applied physics letters 2004-01, Vol.84 (4), p.502-504
Main Authors: Yoo, Y.-Z., Sekiguchi, T., Chikyow, T., Kawasaki, M., Onuma, T., Chichibu, S. F., Song, J. H., Koinuma, H.
Format: Article
Language:English
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Summary:V defects were observed in the ZnO films epitaxially grown on the ZnS-buffered Si. Although the defects were located on the surface, strong near-bandedge emission confined to the {101̄1} facets of V defects was observed at room temperature. The near-bandedge emission spreads out over the whole film centering at V defects at 30 K. The detailed optical characterization shows that activation of excitonic absorption is responsible for this unique optical behavior.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1643535