V defects of ZnO thin films grown on Si as an ultraviolet optical path

V defects were observed in the ZnO films epitaxially grown on the ZnS-buffered Si. Although the defects were located on the surface, strong near-bandedge emission confined to the {101̄1} facets of V defects was observed at room temperature. The near-bandedge emission spreads out over the whole film...

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Published in:Applied physics letters 2004-01, Vol.84 (4), p.502-504
Main Authors: Yoo, Y.-Z., Sekiguchi, T., Chikyow, T., Kawasaki, M., Onuma, T., Chichibu, S. F., Song, J. H., Koinuma, H.
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description V defects were observed in the ZnO films epitaxially grown on the ZnS-buffered Si. Although the defects were located on the surface, strong near-bandedge emission confined to the {101̄1} facets of V defects was observed at room temperature. The near-bandedge emission spreads out over the whole film centering at V defects at 30 K. The detailed optical characterization shows that activation of excitonic absorption is responsible for this unique optical behavior.
doi_str_mv 10.1063/1.1643535
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title V defects of ZnO thin films grown on Si as an ultraviolet optical path
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