Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

We present an electroreflectance investigation on the polarization field in InGaN/AlInGaN quantum wells (QWs) grown on GaN, in which the AlInGaN barrier is lattice-matched to the GaN substrate. Due to the quantum-confined Stark effect on the QWs, the bias-dependent spectra reveal a paraboliclike ene...

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Bibliographic Details
Published in:Applied physics letters 2004-02, Vol.84 (7), p.1114-1116
Main Authors: Hsu, T. M., Lai, C. Y., Chang, W.-H., Pan, C.-C., Chuo, C.-C., Chyi, J.-I.
Format: Article
Language:English
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Summary:We present an electroreflectance investigation on the polarization field in InGaN/AlInGaN quantum wells (QWs) grown on GaN, in which the AlInGaN barrier is lattice-matched to the GaN substrate. Due to the quantum-confined Stark effect on the QWs, the bias-dependent spectra reveal a paraboliclike energy shift, an intensity minimum, and an 180° phase change at the flat-band voltage. By using this technique, the polarization field can be measured precisely. We found that the polarization field in the InGaN/AlInGaN QW is reduced significantly as compared with that in the InGaN/GaN system. The reduced polarization field is attributed to the contribution of spontaneous polarization in the quaternary barrier, which tends to compensate the piezoelectric polarization in the InGaN QWs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1645994