Infrared 45° reflectometry of Li doped ZnO films

Lithium doped (0–10 at. % Li) ZnO films were grown in the wurtzite structure on sapphire (001) substrates and investigated in the 200–1200 cm−1 frequency range at 300 K by far-infrared reflectivity spectroscopy using polarized oblique (45°) incidence. This technique has enabled us to determine the l...

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Bibliographic Details
Published in:Journal of applied physics 2004-03, Vol.95 (6), p.3005-3009
Main Authors: Kafadaryan, E. A., Petrosyan, S. I., Hayrapetyan, A. G., Hovsepyan, R. K., Manukyan, A. L., Vardanyan, E. S., Goulanian, E. Kh, Zerrouk, A. F.
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Language:English
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Summary:Lithium doped (0–10 at. % Li) ZnO films were grown in the wurtzite structure on sapphire (001) substrates and investigated in the 200–1200 cm−1 frequency range at 300 K by far-infrared reflectivity spectroscopy using polarized oblique (45°) incidence. This technique has enabled us to determine the longitudinal optical phonon frequency E1(LO) at 576 cm−1 of the fundamental lattice vibration at the center of the Brillouin zone, as well as to investigate the LO phonon-plasmon coupling in the low carrier density (N⩽1018 cm−3) ZnO films. The energy shift and halfwidth broadening of the LO phonon band in comparison with the uncoupled mode in high-ohmic ZnO:0.8 at. % Li (ρdc=0.6×106 Ω cm) film have been analyzed to get the concentration and “optical” mobility of charge carriers in the Li doped ZnO films. The results of optical, x-ray diffraction and dc resistivity measurements are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1647268