EFFECT OF INHOMOGENEOUS MINORITY CARRIER DISTRIBUTIONS IN ELECTRON-BEAM-PUMPED LASERS

Power output versus beam current characteristics of electron-beam-pumped semiconductor lasers do not exhibit a linear dependence pattern. We demonstrate that this behavior reflects the nonuniform nature of the steady-state distribution of bombardment-induced minority carriers. The treatment suggests...

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Bibliographic Details
Published in:Applied physics letters 1968-01, Vol.12 (4), p.125-127
Main Authors: Klein, C. A., Lavine, J. M.
Format: Article
Language:English
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Summary:Power output versus beam current characteristics of electron-beam-pumped semiconductor lasers do not exhibit a linear dependence pattern. We demonstrate that this behavior reflects the nonuniform nature of the steady-state distribution of bombardment-induced minority carriers. The treatment suggests a novel method of assessing the diffusion length in semiconductors; for laser-grade n-type GaAs we find L ≲ 1 μ.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1651921