FORMATION OF SiC IN SILICON BY ION IMPLANTATION

The production of SiC in single-crystal silicon by C12+ implantation to fluences of 1017/cm2-side followed by annealing has been detected by the characteristic infrared absorption of the TO phonon of SiC. Immediately following room-temperature implantation and after 20-min isochronal anneals up to t...

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Bibliographic Details
Published in:Applied physics letters 1971-01, Vol.18 (11), p.509-511
Main Authors: Borders, J. A., Picraux, S. T., Beezhold, W.
Format: Article
Language:English
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Summary:The production of SiC in single-crystal silicon by C12+ implantation to fluences of 1017/cm2-side followed by annealing has been detected by the characteristic infrared absorption of the TO phonon of SiC. Immediately following room-temperature implantation and after 20-min isochronal anneals up to temperatures ≤ 825°C, a previously unreported broad absorption band centered at 700–725 cm−1 is observed. SiC is observed to form at temperatures ≈ 850°C. For anneals ≥ 850°C, most of the broad absorption band shifts into the SiC-TO phonon absorption band. From the infrared absorption measurements together with the results of He+ backscattering, we conclude that about half of the implanted atoms are incorporated into microregions of SiC which are surrounded by bulk silicon.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1653516