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HILLOCKS AS STRUCTURAL MARKERS FOR ELECTROMIGRATION RATE MEASUREMENTS IN THIN FILMS
A simple experiment is presented to measure the rate of solute mass transport (electromigration) in dilute alloy thin-film conductors. A structural marker motion method was employed to determine the rate of copper movement (average ion velocity=4.5×10−8 cm/sec) in Al–Cu thin films during electrical...
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Published in: | Applied physics letters 1971-04, Vol.18 (8), p.344-346 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A simple experiment is presented to measure the rate of solute mass transport (electromigration) in dilute alloy thin-film conductors. A structural marker motion method was employed to determine the rate of copper movement (average ion velocity=4.5×10−8 cm/sec) in Al–Cu thin films during electrical stress (4.7×105 A/cm2 at 150 °C ambient temperature). |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1653690 |