Electromigration in conductor stripes under pulsed dc powering

Thin Ti–Au films on sapphire were powered using pulsed dc. The incidence of electromigration damage is a complex function of pulse duration and repetition rate. For a given total ``exposure'' (fixed current density for a fixed total on-time) the damage may be reduced or eliminated by using...

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Bibliographic Details
Published in:Applied physics letters 1972-10, Vol.21 (8), p.397-398
Main Authors: English, A.T., Tai, K.L., Turner, P.A.
Format: Article
Language:English
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Summary:Thin Ti–Au films on sapphire were powered using pulsed dc. The incidence of electromigration damage is a complex function of pulse duration and repetition rate. For a given total ``exposure'' (fixed current density for a fixed total on-time) the damage may be reduced or eliminated by using duty cycles less than 100%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1654428