Carrier mobility profiles for low-dose boron-implanted layers

Carrier concentration and mobility profiles of low-dose boron-implanted layers have been measured for several low-temperature heat treatments. It is found that sufficient activation of impurities can be obtained, but that significantly lower mobilities have to be expected.

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Published in:Applied physics letters 1974-01, Vol.25 (7), p.390-391
Main Authors: Darwish, M. Y., Luginbühl, H. W.
Format: Article
Language:English
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container_title Applied physics letters
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creator Darwish, M. Y.
Luginbühl, H. W.
description Carrier concentration and mobility profiles of low-dose boron-implanted layers have been measured for several low-temperature heat treatments. It is found that sufficient activation of impurities can be obtained, but that significantly lower mobilities have to be expected.
doi_str_mv 10.1063/1.1655520
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ispartof Applied physics letters, 1974-01, Vol.25 (7), p.390-391
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title Carrier mobility profiles for low-dose boron-implanted layers
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