Zn-Diffusion-Induced Damage in InSb Diodes

Relatively shallow (2–10 μ) Zn diffusions into(1̄1̄1̄) Sb surfaces of undoped n-type InSb with Zn surface concentration exceeding 1020/cm3 exhibit lattice contractions of the order of 0.12%, high dislocation densities and mosaic structure in the diffused region. X-ray double-crystal spectrometer roc...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 1970-01, Vol.41 (1), p.280-285
Main Authors: Mozzi, R. L., Lavine, J. M.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Relatively shallow (2–10 μ) Zn diffusions into(1̄1̄1̄) Sb surfaces of undoped n-type InSb with Zn surface concentration exceeding 1020/cm3 exhibit lattice contractions of the order of 0.12%, high dislocation densities and mosaic structure in the diffused region. X-ray double-crystal spectrometer rocking curves suggest that preferential tilt of the(1̄1̄1̄) diffused planes by about 0.05° relative to the substrate occurs when the substrate is about 5° off(1̄1̄1̄) orientation. High-concentration Zn diffusions have yielded low quality diodes with zero bias impedances of only a few hundred ohms and poor photoresponse. On the other hand, surface concentrations less than 1019/cm3 have produced rocking curves characteristic of nearly perfect crystals and diodes having zero bias impedance values of the order of 104 Ω and good photoresponse.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1658334