Dependence of Schottky Barrier Height on Donor Concentration

Schottky barrier heights of Au contacts to n-type Si with either etch-polished or vacuum-cleaved interfaces are independent of donor concentration within an experimental uncertainty of about ±0.05 eV for 1014 cm−3≤ND≤1019 cm−3. Within the same uncertainty and over the same doping range, barrier heig...

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Bibliographic Details
Published in:Journal of applied physics 1970-01, Vol.41 (1), p.303-311
Main Authors: Archer, R. J., Yep, T. O.
Format: Article
Language:English
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Summary:Schottky barrier heights of Au contacts to n-type Si with either etch-polished or vacuum-cleaved interfaces are independent of donor concentration within an experimental uncertainty of about ±0.05 eV for 1014 cm−3≤ND≤1019 cm−3. Within the same uncertainty and over the same doping range, barrier heights determined from capacitance using the standard formula are equal to those determined from photoemission thresholds. A theory for deducing barrier heights from photoemission thresholds that includes the effects of tunneling and image force is presented. The results are interpreted in terms of a simple model for the interface, which is characterized by the thickness d and dielectric constant κ′ of the interfacial film and the density nss of interface states. The insensitivity of the barrier height to the quantity of space charge leads to the following limit on the interfacial parameters: (k′/d)+1.8×10−6nss≥3.8×108 cm−1for d in cm, and nss in cm−2 eV−1.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1658340