Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x

Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A...

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Bibliographic Details
Published in:Journal of applied physics 1971-07, Vol.42 (8), p.3201-3204
Main Authors: Antypas, G. A., Yep, T. O.
Format: Article
Language:English
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Summary:Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1660707