Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x

Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A...

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Published in:Journal of applied physics 1971-07, Vol.42 (8), p.3201-3204
Main Authors: Antypas, G. A., Yep, T. O.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c747-10db0dcb2600837c2860d24ab818cd3f4715e6b1a648e99ed2e33165bea17853
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container_issue 8
container_start_page 3201
container_title Journal of applied physics
container_volume 42
creator Antypas, G. A.
Yep, T. O.
description Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.
doi_str_mv 10.1063/1.1660707
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1660707</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1660707</sourcerecordid><originalsourceid>FETCH-LOGICAL-c747-10db0dcb2600837c2860d24ab818cd3f4715e6b1a648e99ed2e33165bea17853</originalsourceid><addsrcrecordid>eNotz09LwzAYgPEgCtbpwW-Qq4fM923a_DmOOeeg4EDvJU1SGpntTCpWP4HnfUQ_iYg7PbcHfoRcI8wRBL_FOQoBEuQJyRCUZrIs4ZRkADkypaU-JxcpvQAgKq4zcreOw8fYUdM7uuxMNHb0MXyZMQw9HVpahbf34Ni2M8nT1T6MZgpmRzf9IuHP94FOdEunS3LWml3yV8fOyNP96nn5wKrH9Wa5qJiVhWQIrgFnm1wAKC5trgS4vDCNQmUdbwuJpRcNGlEor7V3ueccRdl4g1KVfEZu_q82DilF39b7GF5N_KwR6j98jfURz38Be51LCA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x</title><source>AIP Digital Archive</source><creator>Antypas, G. A. ; Yep, T. O.</creator><creatorcontrib>Antypas, G. A. ; Yep, T. O.</creatorcontrib><description>Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 &lt; x &lt; 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1660707</identifier><language>eng</language><ispartof>Journal of applied physics, 1971-07, Vol.42 (8), p.3201-3204</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c747-10db0dcb2600837c2860d24ab818cd3f4715e6b1a648e99ed2e33165bea17853</citedby><cites>FETCH-LOGICAL-c747-10db0dcb2600837c2860d24ab818cd3f4715e6b1a648e99ed2e33165bea17853</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27898,27899</link.rule.ids></links><search><creatorcontrib>Antypas, G. A.</creatorcontrib><creatorcontrib>Yep, T. O.</creatorcontrib><title>Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x</title><title>Journal of applied physics</title><description>Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 &lt; x &lt; 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1971</creationdate><recordtype>article</recordtype><recordid>eNotz09LwzAYgPEgCtbpwW-Qq4fM923a_DmOOeeg4EDvJU1SGpntTCpWP4HnfUQ_iYg7PbcHfoRcI8wRBL_FOQoBEuQJyRCUZrIs4ZRkADkypaU-JxcpvQAgKq4zcreOw8fYUdM7uuxMNHb0MXyZMQw9HVpahbf34Ni2M8nT1T6MZgpmRzf9IuHP94FOdEunS3LWml3yV8fOyNP96nn5wKrH9Wa5qJiVhWQIrgFnm1wAKC5trgS4vDCNQmUdbwuJpRcNGlEor7V3ueccRdl4g1KVfEZu_q82DilF39b7GF5N_KwR6j98jfURz38Be51LCA</recordid><startdate>19710701</startdate><enddate>19710701</enddate><creator>Antypas, G. A.</creator><creator>Yep, T. O.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19710701</creationdate><title>Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x</title><author>Antypas, G. A. ; Yep, T. O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c747-10db0dcb2600837c2860d24ab818cd3f4715e6b1a648e99ed2e33165bea17853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1971</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Antypas, G. A.</creatorcontrib><creatorcontrib>Yep, T. O.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Antypas, G. A.</au><au>Yep, T. O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x</atitle><jtitle>Journal of applied physics</jtitle><date>1971-07-01</date><risdate>1971</risdate><volume>42</volume><issue>8</issue><spage>3201</spage><epage>3204</epage><pages>3201-3204</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 &lt; x &lt; 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.</abstract><doi>10.1063/1.1660707</doi><tpages>4</tpages></addata></record>
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1089-7550
language eng
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title Growth and Characterization of Liquid-Phase Epitaxial InAs1− x P x
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-03-04T07%3A46%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20and%20Characterization%20of%20Liquid-Phase%20Epitaxial%20InAs1%E2%88%92%20x%20P%20x&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Antypas,%20G.%20A.&rft.date=1971-07-01&rft.volume=42&rft.issue=8&rft.spage=3201&rft.epage=3204&rft.pages=3201-3204&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1660707&rft_dat=%3Ccrossref%3E10_1063_1_1660707%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c747-10db0dcb2600837c2860d24ab818cd3f4715e6b1a648e99ed2e33165bea17853%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true