Electrical transport phenomena in amorphous gallium phosphide films

Conduction processes in 50 amorphous GaP films were studied over the temperature range 77 ≤ T ≤ 400°K, for sample thicknesses from 0.1 to 2 μ, for electric fields up to 106 V/cm, and for frequencies up to 106 Hz. Contact effects were shown to be negligible; therefore, all conduction processes report...

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Published in:Journal of applied physics 1973-01, Vol.44 (4), p.1666-1672
Main Authors: Barbe, D. F., Saks, N. S.
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Language:English
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Saks, N. S.
description Conduction processes in 50 amorphous GaP films were studied over the temperature range 77 ≤ T ≤ 400°K, for sample thicknesses from 0.1 to 2 μ, for electric fields up to 106 V/cm, and for frequencies up to 106 Hz. Contact effects were shown to be negligible; therefore, all conduction processes reported here are bulk limited. ac and dc conduction is Ohmic for fields up to 104 V/cm. The dc activation energy at 300°K is 0.55 eV which is approximately half the optical band gap. Above 105 Hz, the ac conductivity at 300°K increases as ω0.9, indicating hopping conduction. dc conduction at fields greater than 104 V/cm exhibits Poole-Frenkel behavior. Calculation of the dielectric constant by means of the Poole-Frenkel constant yields K=9.84, in agreement with the optically determined dielectric constant. For JE≥1.4×104 W/cm3, the Poole-Frenkel current is enhanced due to Joule heating.
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title Electrical transport phenomena in amorphous gallium phosphide films
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