Relationship between resistivity and phosphorus concentration in silicon

Accurate electrical and analytical measurements allowed us to determine a relationship between resistivity and phosphorus concentration in doped silicon. This relationship is compared with that obtained by other authors in the case of n-type silicon, and the differences due to the various doping age...

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Bibliographic Details
Published in:Journal of applied physics 1974-10, Vol.45 (10), p.4576-4580
Main Authors: Mousty, F., Ostoja, P., Passari, L.
Format: Article
Language:English
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Summary:Accurate electrical and analytical measurements allowed us to determine a relationship between resistivity and phosphorus concentration in doped silicon. This relationship is compared with that obtained by other authors in the case of n-type silicon, and the differences due to the various doping agents are discussed. Differences between concentrations determined by analytical techniques and by Hall effect measurements are reported.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1663091