Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes

Current-voltage (I–V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field....

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Bibliographic Details
Published in:Applied physics letters 2004-03, Vol.84 (11), p.1961-1963
Main Authors: Qiu, Z. J., Gui, Y. S., Guo, S. L., Dai, N., Chu, J. H., Zhang, X. X., Zeng, Y. P.
Format: Article
Language:English
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Summary:Current-voltage (I–V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field. The observed plateau-like structures appear in negative differential resistance region on the I–V curves and are magnetic-field dependent. The plateau-like structures are due to the coupling between the energy levels in the emitter well and in the main quantum well.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1682690